http://hk.renesas.com/ The latest news from Renesas Technology (China) en Copyright 2010, Renesas Technology Corp. http://www.rssboard.org/rss-specification Wed, 10 Feb 2010 02:29:00 GMT http://www.renesas.com/images/splash_logo.gif http://hk.renesas.com/ 137 45 60 0121314151617181920212223 SaturdaySunday http://hk.renesas.com/fmwk.jsp?cnt=/press_release20100210.htm&fp=/company_info/news_and_events/press_releases http://hk.renesas.com/fmwk.jsp?cnt=/press_release20100210.htm&fp=/company_info/news_and_events/press_releases Wed, 10 Feb 2010 02:29:00 GMT Leuven, February 10, 2010—— At today's International Solid State Circuit Conference, imec and its research partners Renesas Technology Corp. and M4S present a complete transceiver with RF, baseband and data converter circuits in 40nm low-power CMOS. The fully reconfigurable transceiver is compatible with various wireless standards and applications, including the upcoming mobile broadband 3GPP-LTE standard.

]]> technology digital home industry http://hk.renesas.com/fmwk.jsp?cnt=/press_release20100203.htm&fp=/company_info/news_and_events/press_releases http://hk.renesas.com/fmwk.jsp?cnt=/press_release20100203.htm&fp=/company_info/news_and_events/press_releases Wed, 3 Feb 2010 10:37:00 GMT Tokyo, February 3, 2010 — Renesas Technology Corp. today announced the completion of a new building involving an investment of approximately ¥4 billion to increase microcontroller (MCU) production capacity at the back-end process plant of Renesas Semiconductor (Beijing) Co., Ltd. (RSB), in Beijing, China.

]]> technology corporate http://hk.renesas.com/fmwk.jsp?cnt=/press_release20100201.htm&fp=/company_info/news_and_events/press_releases&campaign=RSSNews http://hk.renesas.com/fmwk.jsp?cnt=/press_release20100201.htm&fp=/company_info/news_and_events/press_releases Mon, 1 Feb 2010 01:29:00 GMT KAWASAKI, Japan, TOKYO, Japan, February 1, 2010 — NEC Electronics Corporation (NEC Electronics; TSE: 6723) and Renesas Technology Corp. (Renesas Technology) today announced candidates of the executive team that will be in place following the business integration (the "Business Integration" or the "Merger") on April 1, 2010 (scheduled).

]]> corporate http://hk.renesas.com/fmwk.jsp?cnt=/press_release20100112.htm&fp=/company_info/news_and_events/press_releases http://hk.renesas.com/fmwk.jsp?cnt=/press_release20100112.htm&fp=/company_info/news_and_events/press_releases Tue, 12 Jan 2010 01:44:00 GMT Tokyo, January 12, 2010 —— Renesas Technology Corp. today announced the CRD5CM reverse conducting thyristor *1 for use in voltage regulators for two-wheeled vehicles and engines for general-purpose batteries. The CRD5CM integrates a thyristor *2 and a rectifier diode in a single element. Sample shipments will begin in February 2010 in Japan.

]]> discrete automotive http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091222a.htm&fp=/company_info/news_and_events/press_releases http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091222a.htm&fp=/company_info/news_and_events/press_releases Tue, 22 Dec 2009 03:18:00 GMT 2009年，全球經濟危機所帶來的負面影響波及世界各個角落。中國的半導體市場規模下降至682億美元，較去年下滑6.8%。相對于過去幾年保持强勁增長的中國半導體市場來說，這是很大的降幅。然而正是在這樣嚴峻的挑戰面前，瑞薩科技（以下簡稱瑞薩）却以其一貫穩扎穩打的經營策略，依舊在消費電子、汽車電子等領域保持著穩步增長的態勢。通過與中國所有電子廠商及研究機構的密切合作，長期與中國企業共同成長的戰略，正在奏效。完善的戰略布局與領先的産品技術讓沈澱多年的瑞薩，進一步釋放出强大的能量。

]]> corporate http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091222.htm&fp=/company_info/news_and_events/press_releases http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091222.htm&fp=/company_info/news_and_events/press_releases Tue, 22 Dec 2009 03:18:00 GMT Tokyo, December 22, 2009 —— Hitachi High-Technologies Corporation and Renesas Technology Corp. today announced that Hitachi High-Tech Instruments Co., Ltd., a wholly owned subsidiary of Hitachi High-Technologies, and Renesas Eastern Japan Semiconductor, Inc., a wholly owned subsidiary of Renesas Technology, today entered into an absorption-type company split agreement regarding the transfer of the semiconductor manufacturing equipment business, which is based at the Yamanashi Factory of Renesas Eastern Japan Semiconductor, to Hitachi High-Tech Instruments.

]]> corporate http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091215.htm&fp=/company_info/news_and_events/press_releases http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091215.htm&fp=/company_info/news_and_events/press_releases Tue, 15 Dec 2009 02:21:00 GMT KAWASAKI, Japan, TOKYO, Japan, December 15, 2009 —NEC Electronics Corporation (NEC Electronics; TSE: 6723) and Renesas Technology Corp. (Renesas) today announced they have entered into a merger agreement to integrate business operations at NEC Electronics and Renesas (the “Business Integration” or the “Merger”) on April 1, 2010 (scheduled). The agreement is subsequent to the definitive agreement, which was signed on September 16, 2009. The Business Integration will become effective following the adoption of the resolutions at Extraordinary General Meetings of Shareholders of both NEC Electronics and Renesas and approval by relevant authorities.

]]> corporate http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091211.htm&fp=/company_info/news_and_events/press_releases&site http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091211.htm&fp=/company_info/news_and_events/press_releases&site Fri, 11 Dec 2009 07:46:00 GMT 2009年12月17日，瑞薩中國（以下簡稱瑞薩）為了讓中國工程師全面了解瑞薩在電機控制領域領先的技術優勢，在中電網舉辦的在線座談活動中，首次公開了無傳感器矢量電機控制方案中的許多重要相關信息。本次座談活動不但使瑞薩先進的無傳感器矢量電機控制方案得到了該領域技術專家的一致認可，而且受到了業內工程師們的廣泛關注。

]]> mpu&mcu http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091210.htm&fp=/company_info/news_and_events/press_releases http://hk.renesas.com/fmwk.jsp?cnt=/press_release20091210.htm&fp=/company_info/news_and_events/press_releases Thu, 10 Dec 2009 07:46:00 GMT Tokyo, December 10, 2009 —— Renesas Technology Corp. today introduced a high-performance TCAM (Ternary CAM) *1 Series, comprising a portfolio of TCAM memory products to enable high speed packet processing for networking equipment such as routers and switches. The first product in the series is the R8A20410BG TCAM, which has a capacity of 20Mbits and delivers industry-leading high-speed search performance of up to 360 MSPS/Table. Sample shipments will begin in December 2009 in Japan.

]]> memory networks http://hk.renesas.com/fmwk.jsp?cnt=press_release20091207.htm&fp=/company_info/news_and_events/press_releases http://hk.renesas.com/fmwk.jsp?cnt=press_release20091207.htm&fp=/company_info/news_and_events/press_releases Mon, 7 Dec 2009 09:21:00 GMT Tokyo, December 7, 2009 —— Renesas Technology Corp. today announced the R2J20653ANP, an Integrated Driver-MOSFET for use in voltage regulators (VR) for the CPU, memory, etc., of notebook PCs. It complies with the integrated Driver-MOSFET (DrMOS) standard and combines a high-voltage tolerance supporting input voltages up to 27V and the industry's top power supply efficiency of 91% (when operating with an input voltage of 20 V and an output voltage of 1.1 V). Mass production will begin on December 7, 2009.

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